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AO4420 - 30V N-Channel MOSFET

General Description

The AO4420 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics.

This device is suitable for use as a synchronous switch in PWM applications.

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Full PDF Text Transcription for AO4420 (Reference)

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AO4420 30V N-Channel MOSFET General Description The AO4420 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteris...

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e excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is suitable for use as a synchronous switch in PWM applications. Product Summary VDS (V) = 30V ID = 13.7A (VGS = 10V) RDS(ON) < 10.5mΩ (VGS = 10V) RDS(ON) < 12mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested Top View D D D D SOIC-8 Bottom View D G S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM Power Dissipation TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG G Maximum

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