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AO4420L - N-Channel FET

Download the AO4420L datasheet PDF. This datasheet also covers the AO4420 variant, as both devices belong to the same n-channel fet family and are provided as variant models within a single manufacturer datasheet.

General Description

The AO4420 uses advanced trench technology to provide excellent R DS(ON), shoot-through immunity and www.DataSheet4U.com body diode characteristics.This device is suitable for use as a synchronous switch in PWM applications.

AO4420L is offered in a lead-free package.

Key Features

  • VDS (V) = 30V ID = 13.7A RDS(ON) < 10.5mΩ (VGS = 10V) RDS(ON) < 12mΩ (VGS = 4.5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25°C Current A ID TA=70°C B Pulsed Drain Current IDM TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-AmbientA A Maximum Junction-to-Ambient C Maximum Junction-to-L.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AO4420_AlphaOmegaSemiconductors.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for AO4420L (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AO4420L. For precise diagrams, and layout, please refer to the original PDF.

Rev 4: Nov 2004 AO4420, AO4420L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General Description The AO4420 uses advanced trench technology to pro...

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General Description The AO4420 uses advanced trench technology to provide excellent R DS(ON), shoot-through immunity and www.DataSheet4U.com body diode characteristics.This device is suitable for use as a synchronous switch in PWM applications. AO4420L is offered in a lead-free package. AO4420L ( Green Product ) is offered in a lead-free package. Features VDS (V) = 30V ID = 13.7A RDS(ON) < 10.5mΩ (VGS = 10V) RDS(ON) < 12mΩ (VGS = 4.

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