Description
The AO4420 uses advanced trench technology to provide excellent R DS(ON), shoot-through immunity and www.DataSheet4U.com body diode characteristics.This device is suitable for use as a synchronous switch in PWM applications.
Features
- VDS (V) = 30V ID = 13.7A RDS(ON) < 10.5mΩ (VGS = 10V) RDS(ON) < 12mΩ (VGS = 4.5V)
D S S S G D D D D
G S
SOIC-8
Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25°C Current A ID TA=70°C B Pulsed Drain Current IDM TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-AmbientA A Maximum Junction-to-Ambient C Maximum Junction-to-L.
AO4420_AlphaOmegaSemiconductors.pdf