VDS (V) = -30V ID = -15A RDS(ON) < 7mΩ (VGS = -20V) RDS(ON) < 8.5mΩ (VGS = -10V) ESD Rating: 6000V HBM
The AO4423 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM.
Full PDF Text Transcription for AO4423 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AO4423. For precise diagrams, and layout, please refer to the original PDF.
Rev 4: May 2005 AO4423 P-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provide Features VDS (V) = -30V ID = -15A RDS(ON) < 7mΩ ...
View more extracted text
taSheet4U.com provide Features VDS (V) = -30V ID = -15A RDS(ON) < 7mΩ (VGS = -20V) RDS(ON) < 8.5mΩ (VGS = -10V) ESD Rating: 6000V HBM The AO4423 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. AO4423L (Green Product) is offered in a lead-free package. AO4423 is Pb-free (meets ROHS & Sony 259 specifications). AO4423L is a Green Product ordering option. AO4423 and AO4423L are electrically identical.
AO4423 Datasheet
