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AO4433 - P-Channel Power MOSFET

General Description

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Key Features

  • VDS (V) = -30V ID = -11 A (V GS = -20V) RDS(ON) < 14mΩ (VGS = -20V) RDS(ON) < 18mΩ (VGS = -10V) ESD Rating: 1.5KV HBM The AO4433 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM.

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Full PDF Text Transcription for AO4433 (Reference)

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AO4433 P-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provide Features VDS (V) = -30V ID = -11 A (V GS = -20V) RDS(ON) < 14mΩ ...

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ovide Features VDS (V) = -30V ID = -11 A (V GS = -20V) RDS(ON) < 14mΩ (VGS = -20V) RDS(ON) < 18mΩ (VGS = -10V) ESD Rating: 1.5KV HBM The AO4433 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. Standard product AO4433 is Pb-free (meets ROHS & Sony 259 specifications). AO4433L is a Green Product ordering option. AO4433 and AO4433L are electrically identical.

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Brand Logo Part Number Description Manufacturer
VBsemi Logo AO4433 P-Channel MOSFET VBsemi

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