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AO4449 - 30V P-Channel MOSFET

General Description

The AO4449 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge.

This device is suitable for use as a load switch or in PWM applications.

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Full PDF Text Transcription for AO4449 (Reference)

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AO4449 30V P-Channel MOSFET General Description Product Summary The AO4449 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. Th...

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nology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS = -4.5V) 100% UIS Tested 100% Rg Tested -30V -7A < 34mW < 54mW SOIC-8 D Top View Bottom View D D D D G S S S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current TA=25°C TA=70°C ID -7 -5.5 Pulsed Drain Current C IDM -40 Avalanche Current C IAS, IAR 23 Avalanche energy L=0.1mH C EAS, EAR 26 TA=25°C Power Dissipation

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VBsemi Logo AO4449 P-Channel MOSFET VBsemi
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