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AO4618 - 40V Complementary MOSFET

Description

The AO4618 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.

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AO4618 40V Complementary MOSFET General Description Product Summary The AO4618 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications. N-Channel VDS= 40V ID= 8A (VGS=10V) RDS(ON) < 19mΩ (VGS=10V) < 27mΩ (VGS=4.5V) 100% UIS Tested 100% Rg Tested P-Channel -40V -7A (VGS=-10V) RDS(ON) < 23mΩ (VGS=-10V) < 30mΩ (VGS=-4.
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