AO4916L - Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha & Omega Semiconductors
Download the AO4916L datasheet PDF.
This datasheet also covers the AO4916 variant, as both devices belong to the same dual n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.
General Description
The AO4916 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.
The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters.
Note: The manufacturer provides a single datasheet file (AO4916_AlphaOmegaSemiconductors.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for AO4916L (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AO4916L. For precise diagrams, and layout, please refer to the original PDF.
Rev 3: Nov 2004 AO4916, AO4916L( Green Product ) Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4916 uses advanced ...
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stor with Schottky Diode General Description The AO4916 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A Schottky diode is co-packaged in www.DataSheet4U.com parallel with the synchronous MOSFET to boost efficiency further. AO4916L ( Green Product ) is offered in a lead-free package. Features VDS (V) = 30V ID = 8.5A RDS(ON) < 17mΩ (VGS = 10V) RDS(ON) < 27mΩ (VGS = 4.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.
AO4916L Datasheet
