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AO4902 - Dual N-Channel Enhancement Mode Field Effect Transistor

General Description

The AO4902 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

The two identical MOSFETs are co-packaged in parallel with a Schottky diode, making them ideal for many bridge and totem pole applications, for e.g.

DDR memory.

Key Features

  • VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V).

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AO4902 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4902 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two identical MOSFETs are co-packaged in parallel with a Schottky diode, making them ideal for many bridge and totem pole applications, for e.g. DDR memory. Standard Product www.DataSheet4U.com AO4902 is Pb-free (meets ROHS & Sony 259 specifications). AO4902L is a Green Product ordering option. AO4902 and AO4902L are electrically identical. Features VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.