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AO4900A - Dual N-Channel Enhancement Mode Field Effect Transistor

General Description

The AO4900A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters.

Key Features

  • VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V).

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Other Datasheets by Alpha & Omega Semiconductors

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4900A Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4900A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further. Standard Product AO4900A is Pbwww.DataSheet4U.com free (meets ROHS & Sony 259 specifications). AO4900AL is a Green Product ordering option. AO4900A and AO4900AL are electrically identical. Features VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.