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AO4904 - Dual N-Channel Enhancement Mode Field Effect Transistor

General Description

The AO4904 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters.

Key Features

  • VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V).

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Other Datasheets by Alpha & Omega Semiconductors

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Full PDF Text Transcription (Reference)

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AO4904 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4904 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further Standard Product AO4904 is Pb-free (meets ROHS & Sony 259 specifications). AO4904L is a Green Product www.DataSheet4U.com ordering option. AO4904 and AO4904L are electrically identical. S2 G2 S1/A G1 D2 D2 D1/K D1/K G1 S1 Features VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.