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AO4916A - Dual N-Channel Enhancement Mode Field Effect Transistor

Datasheet Summary

Description

The AO4916A uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters.

Features

  • Q1 Q2 VDS (V) = 30V VDS(V) = 30V ID = 8.5A (VGS = 10V) ID = 8.5A (VGS = 10V) RDS(ON) < 17mΩ.

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Datasheet Details

Part number AO4916A
Manufacturer Alpha & Omega Semiconductors
File Size 212.57 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet AO4916A Datasheet
Additional preview pages of the AO4916A datasheet.

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AO4916A Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4916A uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further Standard product AO4916A is Pb-free (meets ROHS & Sony 259 specifications). AO4916AL is a Green Product www.DataSheet4U.com ordering option. AO4916A and AO4916AL are electrically identical. Features Q1 Q2 VDS (V) = 30V VDS(V) = 30V ID = 8.5A (VGS = 10V) ID = 8.5A (VGS = 10V) RDS(ON) < 17mΩ <17mΩ (VGS = 10V) RDS(ON) < 27mΩ <27mΩ (VGS = 4.
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