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AO4916L - Dual N-Channel Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the AO4916L, a member of the AO4916 Dual N-Channel Enhancement Mode Field Effect Transistor family.

Datasheet Summary

Description

The AO4916 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters.

Features

  • VDS (V) = 30V ID = 8.5A RDS(ON) < 17mΩ (VGS = 10V) RDS(ON) < 27mΩ (VGS = 4.5V).

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Datasheet preview – AO4916L

Datasheet Details

Part number AO4916L
Manufacturer Alpha & Omega Semiconductors
File Size 647.24 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet AO4916L Datasheet
Additional preview pages of the AO4916L datasheet.

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Full PDF Text Transcription

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Rev 3: Nov 2004 AO4916, AO4916L( Green Product ) Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4916 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A Schottky diode is co-packaged in www.DataSheet4U.com parallel with the synchronous MOSFET to boost efficiency further. AO4916L ( Green Product ) is offered in a lead-free package. Features VDS (V) = 30V ID = 8.5A RDS(ON) < 17mΩ (VGS = 10V) RDS(ON) < 27mΩ (VGS = 4.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.
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