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AO4916L - Dual N-Channel Enhancement Mode Field Effect Transistor

Download the AO4916L datasheet PDF. This datasheet also covers the AO4916 variant, as both devices belong to the same dual n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The AO4916 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters.

Key Features

  • VDS (V) = 30V ID = 8.5A RDS(ON) < 17mΩ (VGS = 10V) RDS(ON) < 27mΩ (VGS = 4.5V).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AO4916_AlphaOmegaSemiconductors.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Rev 3: Nov 2004 AO4916, AO4916L( Green Product ) Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4916 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A Schottky diode is co-packaged in www.DataSheet4U.com parallel with the synchronous MOSFET to boost efficiency further. AO4916L ( Green Product ) is offered in a lead-free package. Features VDS (V) = 30V ID = 8.5A RDS(ON) < 17mΩ (VGS = 10V) RDS(ON) < 27mΩ (VGS = 4.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.