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AO4922 - Dual N-Channel Enhancement Mode Field Effect Transistor

General Description

The AO4922 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters.

Key Features

  • FET1 VDS (V) = 30V ID = 9A RDS(ON) < 15.8mΩ RDS(ON) < 18.5mΩ General.

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Full PDF Text Transcription for AO4922 (Reference)

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AO4922 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor SRFET TM Features FET1 VDS (V) = 30V ID = 9A RDS(ON) < 15.8mΩ RDS(ON) < 18.5mΩ General Descripti...

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(V) = 30V ID = 9A RDS(ON) < 15.8mΩ RDS(ON) < 18.5mΩ General Description The AO4922 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A monolithically integrated Schottky www.DataSheet4U.com diode in parallel with the synchronous MOSFET to boost efficiency further. Standard Product AO4922 is Pb-free (meets ROHS & Sony 259 specifications). AO4922L is a Green Product ordering option. AO4922L and AO4922 are electrically identical. SOIC-8 FET2 V DS(V) = 30V I D=7.3A (VGS = 10V)

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