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AO4924 - Asymmetric Dual N-Channel MOSFET

Description

The AO4924 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters.

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General Description The AO4924 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further. AO4924 Asymmetric Dual N-Channel MOSFET SRFET TM Product Summary FET1 VDS (V) = 30V ID = 9A RDS(ON) < 15.8mΩ RDS(ON) < 19.5mΩ FET2 VDS(V) = 30V ID=7.3A (VGS = 10V) <24mΩ (VGS = 10V) <29mΩ (VGS = 4.
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