Datasheet Details
| Part number | AO6802 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 264.10 KB |
| Description | 30V Dual N-Channel MOSFET |
| Download | AO6802 Download (PDF) |
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| Part number | AO6802 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 264.10 KB |
| Description | 30V Dual N-Channel MOSFET |
| Download | AO6802 Download (PDF) |
|
|
|
The AO6802 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 3.5A < 50mW < 70mW TSOP6 D1 Top View G1 1 S2 2 6 D1 5 S1 G2 3 4 D2 G1 G2 Pin1 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 3.5 3 20 1.15 0.73 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 78 106 Maximum Junction-to-Lead Steady-State RqJL 64 Max 110 150 80 D2 S2 Units V V A W °C Units °C/W °C/W °C/W Rev 3.1: August 2023 www.aosmd.com Page 1 of 5 AO6802 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 mA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250mA 1.5 2 2.5 V ID(ON) On state drain current VGS=10V, VDS=5V 20 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=3.5A TJ=125°C 40 50 mW 61 77 VGS=4.5V, ID=2A 52 70 mW gFS Forward Transconductance VDS=5V, ID=3.5A 12 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.79 1 V IS Maximum Body-Diode Continuous Current 1.5 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 210 275 pF 35 pF 23 pF 0.7 1.5 3.
AO6802 30V Dual N-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AO6802 | Dual N-Channel MOSFET | Kexin |
| UMW | AO6802 | Dual 30V N-ChanneI MOSFET | UMW |
 |
AO6802 | N-Channel MOSFET | Freescale |
| Part Number | Description |
|---|---|
| AO6800 | 30V Dual N-Channel MOSFET |
| AO6801 | Dual P-Channel MOSFET |
| AO6801A | 30V Dual P-Channel MOSFET |
| AO6801E | 30V Dual P-Channel MOSFET |
| AO6804 | Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO6804A | 20V Dual N-Channel MOSFET |
| AO6808 | Dual N-Channel MOSFET |
| AO6810 | Dual N-Channel MOSFET |
| AO6400 | 30V N-Channel MOSFET |
| AO6401 | 30V P-Channel MOSFET |