Datasheet Details
| Part number | AOB2906 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 372.47 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet |
 AOB2906 Datasheet
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| Part number | AOB2906 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 372.47 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet |
AOB2906 Datasheet
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• Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charger • Optimized fast-switching applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=8V) 100V 122A < 6.2mΩ < 7.2mΩ < 5.9mΩ∗ < 6.9mΩ∗ Applications • Synchronous Rectifiers in DC/DC and AC/DC Converters • Industrial and Motor Drive applications 100% UIS Tested 100% Rg Tested Top View TO220 Bottom View D D TO-263 D2PAK D Top View Bottom View D D G DS AOT2906 Orderable Part Number AOT2906 AOB2906 S DG Package Type TO-220 TO-263 S G AOB2906 Form Tube Tape & Reel G G S S Minimum Order Quantity 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS VDS Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 122 90 310 25.5 20.5 33 54 120 187 94 8.3 5.3 -55 to 175 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State Maximum Junction-to-Case Steady-State * Surface mount package TO263(AOB2906) Symbol RθJA RθJC Typ 12 50 0.62 Max 15 60 0.8 Units °C/W °C/W °C/W Rev.2.0: May 2016 www.aosmd.com Page 1 of 6 AOT2906/AOB2906 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 100 IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 2.3 VGS=10V, ID=20A TO-220 TJ=125°C RDS(ON) Static Drain-S
AOT2906/AOB2906 100V N-Channel AlphaSGT TM General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOB2906 | N-Channel MOSFET | INCHANGE |
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