Datasheet Details
| Part number | AOB292L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 479.99 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 AOB292L Datasheet
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| Part number | AOB292L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 479.99 KB |
| Description | N-Channel MOSFET |
| Datasheet |
AOB292L Datasheet
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• Trench Power AlphaSGTTM technology • Low RDS(ON) • RoHS and Halogen Free Compliant Applications • Synchronous Rectification for power supply • Ideal for boost converters Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 100% UIS Tested 100% Rg Tested TO-220 TO-220F Top View TO-263 D 100V 105A < 4.5mΩ < 5.3mΩ (< 4.1mW*) (< 4.9mW*) D G AOT292L DS G AOTF292L G DS S AOB292L G S Orderable Part Number AOT292L AOTF292L AOB292L Package Type TO-220 TO-220F TO-263 Form Tube Tube Tape & Reel Minimum Order Quantity 1000 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT(B)292L AOTF292L Drain-Source Voltage VDS 100 Gate-Source Voltage Continuous Drain TC=25°C Current G** TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C VDS Spike I 10μs TC=25°C Power Dissipation B TC=100°C VGS ID IDM IDSM IAS EAS VSPIKE PD ±20 105 70 82 50 420 14.5 11.5 60 180 120 300 47 150 23 TA=25°C Power Dissipation A TA=70°C PDSM 2.1 1.3 Junction and Storage Temperature Range TJ, TSTG -55 to 175 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC AOT(B)292L AOTF292L 15 60 0.5 3.2 Units °C/W °C/W °C/W * Surface mount package TO263 ** Package limited for TO220 & TO263 Rev.3.1: May 2024 www.aosmd.com Page 1 of 7 AOT292L/AOB292L/AOTF292L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage ID=250μA, VGS=0V VDS=100V, VGS=0V VDS=0V, VGS=±20V VDS=VGS, ID=250mA VGS=10V, ID=20A 100 TJ=55°C 2.3
AOT292L/AOB292L/AOTF292L 100V N-Channel AlphaSGT TM General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOB292L | N-Channel MOSFET | INCHANGE |
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