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d Drain Current C IDM Avalanche Current C IAR Repetitive avalanche energy C EAR Single pulsed avalanche energy G EAS 37 23 166 11 234 1345 TC=25°C Power Dissipation B Derate above 25oC PD 417 3.3 MOSFET dv/dt ruggedness Peak diode recovery dv/dt H dv/dt 100 20 Junction and Storage Tem.
