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AOB432 Datasheet N-Channel FET

Manufacturer: Alpha & Omega Semiconductors

General Description

The AOB432 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Standard Product AOB432 is Pb-free (meets ROHS & Sony 259 specifications).

Overview

www.DataSheet4U.com AOB432 N-Channel Enhancement Mode Field Effect.

Key Features

  • VDS (V) = 40V ID = 12 A (VGS = 10V) RDS(ON) < 34 mΩ (VGS = 10V) RDS(ON) < 54 mΩ (VGS = 4.5V) D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 40 ±20 12 11 30 12 20 18 9 2.3 1.5 -55 to 175 Units V V A A mJ W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25°C Repetitive avalanche energy.