Datasheet4U Logo Datasheet4U.com

AOB436 - N-Channel FET

Description

The AOB436 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Standard product AOB436 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = 25V ID = 55A (VGS = 10V) RDS(ON) < 7 mΩ (VGS = 10V) RDS(ON) < 11 mΩ (VGS = 4.5V) 193 18 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 25 ±20 55 55 150 30 45 50 25 3 2.1 -55 to 175 Units V V A A mJ W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25°C Repetitive avalanch.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AOB409L P-Channel MOSFET INCHANGE
AOB410L N-Channel MOSFET INCHANGE
AOB411L P-Channel MOSFET INCHANGE
AOB412L N-Channel MOSFET INCHANGE
AOB414 Power MOSFET VBsemi

Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AOB430 N-Channel FET
AOB432 N-Channel FET
AOB434 N-Channel FET
AOB438 N-Channel FET
AOB403 P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com AOB436 N-Channel Enhancement Mode Field Effect Transistor General Description The AOB436 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOB436 is Pb-free (meets ROHS & Sony 259 specifications). AOB436L is a Green Product ordering option. AOB436 and AOB436L are electrically identical. TO-263 D2-PAK Features VDS (V) = 25V ID = 55A (VGS = 10V) RDS(ON) < 7 mΩ (VGS = 10V) RDS(ON) < 11 mΩ (VGS = 4.
Published: |