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AOB438 - N-Channel FET

Description

The AOB438 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Standard product AOB438 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • 1.4 VDS (V) = 25V ID = 50A (VGS = 10V) RDS(ON) < 6.7 mΩ (VGS = 10V) RDS(ON) < 10 mΩ (VGS = 4.5V) 193 18 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 25 ±20 50 50 150 30 135 50 25 3 2.1 -55 to 175 Units V V A A mJ W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25°C Repetitive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com AOB438 N-Channel Enhancement Mode Field Effect Transistor General Description The AOB438 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOB438 is Pb-free (meets ROHS & Sony 259 specifications). AOB438L is a Green Product ordering option. AOB438 and AOB438L are electrically identical. TO-263 D2-PAK Features 1.4 VDS (V) = 25V ID = 50A (VGS = 10V) RDS(ON) < 6.7 mΩ (VGS = 10V) RDS(ON) < 10 mΩ (VGS = 4.
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