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AOB432 - N-Channel FET

Description

The AOB432 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Standard Product AOB432 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = 40V ID = 12 A (VGS = 10V) RDS(ON) < 34 mΩ (VGS = 10V) RDS(ON) < 54 mΩ (VGS = 4.5V) D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 40 ±20 12 11 30 12 20 18 9 2.3 1.5 -55 to 175 Units V V A A mJ W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25°C Repetitive avalanche energy.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com AOB432 N-Channel Enhancement Mode Field Effect Transistor General Description The AOB432 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOB432 is Pb-free (meets ROHS & Sony 259 specifications). AOB432L is a Green Product ordering option. AOB432 and AOB432L are electrically identical. TO-263 D2-PAK Features VDS (V) = 40V ID = 12 A (VGS = 10V) RDS(ON) < 34 mΩ (VGS = 10V) RDS(ON) < 54 mΩ (VGS = 4.
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