AOB438 Datasheet N-Channel FET

Manufacturer: Alpha & Omega Semiconductors

Datasheet Details

The AOB438 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Standard product AOB438 is Pb-free (meets ROHS & Sony 259 specifications).

www.DataSheet4U.com AOB438 N-Channel Enhancement Mode Field Effect.

1.4 VDS (V) = 25V ID = 50A (VGS = 10V) RDS(ON) < 6.7 mΩ (VGS = 10V) RDS(ON) < 10 mΩ (VGS = 4.5V) 193 18 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 25 ±20 50 50 150 30 135 50 25 3 2.1 -55 to 175 Units V V A A mJ W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25°C Repetitive.