Datasheet Details
| Part number | AOD210V60E |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 491.45 KB |
| Description | 600V N-Channel Power Transistor |
| Datasheet | AOD210V60E-AlphaOmegaSemiconductors.pdf |
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Overview: AOD210V60E 600V, a MOSE TM N-Channel Power Transistor General.
| Part number | AOD210V60E |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 491.45 KB |
| Description | 600V N-Channel Power Transistor |
| Datasheet | AOD210V60E-AlphaOmegaSemiconductors.pdf |
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• Excellent RDS(ON)*A • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery • RoHS 2.0 and Halogen-Free Compliant Applications • SMPS Hard-switching PFC,Resonant PFC/LLC/ZVS FB topologies • Telecom,Server,ATX and Solar Inverter,Motor Drive Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 700V 45A < 0.21Ω 22nC 4.1mJ TO-252 DPAK D Top View Bottom View D D S G G S Orderable Part Number AOD210V60E Package Type TO-252 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Single pulsed avalanche energy H MOSFET dv/dt ruggedness,VDS=0 to 400V Diode reverse recovery VDS VGS ID IDM EAS dv/dt dv/dt VDS=0 to 400V,IF=20A,Tj=25°C di/dt TC=25°C Power Dissipation B Derate above 25°C PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-CaseD,F Symbol RqJA RqCS RqJC G S Form Minimum Order Quantity Tape & Reel 2500 Maximum 600 ±20 15 10 45 188 100 50 500 125 1.0 -55 to 150 300 Units V V A mJ V/ns A/us W W/°C °C °C Typical 40 0.65 Maximum 50 0.5 1.0 Units °C/W °C/W °C/W Rev.1.1: March 2024 www.aosmd.com Page 1 of 6 AOD210V60E Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS BVDSS /∆TJ IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID=250μA, VGS=0V, TJ=25°C ID=10mA, VGS=0V, TJ=150°C ID=10mA, VGS=0V Zero Gate Voltage Drain Current VDS=600V, VGS=0V VDS=480V, TJ=125°C Gate-Body leakage current
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