Datasheet Details
| Part number | AOD2210 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 370.44 KB |
| Description | 200V N-Channel MOSFET |
| Datasheet | AOD2210_AlphaOmegaSemiconductors.pdf |
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Overview: AOD2210/AOI2210 200V N-Channel MOSFET General.
| Part number | AOD2210 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 370.44 KB |
| Description | 200V N-Channel MOSFET |
| Datasheet | AOD2210_AlphaOmegaSemiconductors.pdf |
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• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=5V) 200V 18A < 105mΩ < 120mΩ Applications • Synchronus Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications 100% UIS Tested 100% Rg Tested TO-252 TO251A DPAK IPAK D Top View Bottom View Top View Bottom View D D D D S G Orderable Part Number AOD2210 AOI2210 G S S D G Package Type TO-252 TO-251A Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS VDS Spike Power Dissipation B 10μs TC=25°C TC=100°C VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 15 41 Maximum Junction-to-Case Steady-State RqJC 1 G D S Form Tape & Reel Tube G S Minimum Order Quantity 2500 4000 Maximum 200 ±20 18 13 45 3.0 2.5 9 4 240 100 50 2.5 1.6 -55 to 175 Units V V A A A mJ V W W °C Max Units 20 °C/W 50 °C/W 1.5 °C/W Rev.1.1: December 2023 www.aosmd.com Page 1 of 6 AOD2210/AOI2210 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 200 IDSS Zero Gate Voltage Drain Current VDS=200V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.5 VGS=10V, ID=18A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=5V, ID=16A gFS Forward Transconductance
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOD2210 | N-Channel MOSFET | INCHANGE |
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AOD2210 | N-Channel 200V MOSFET | VBsemi |
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