Datasheet Details
| Part number | AOD409G |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 317.33 KB |
| Description | P-Channel MOSFET |
| Datasheet | AOD409G-AlphaOmegaSemiconductors.pdf |
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Overview: AOD409G 60V P-Channel MOSFET General.
| Part number | AOD409G |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 317.33 KB |
| Description | P-Channel MOSFET |
| Datasheet | AOD409G-AlphaOmegaSemiconductors.pdf |
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• Trench Power MOSFET technology • Low RDS(ON) • Logic Level Driving • RoHS and Halogen-Free Compliant Applications • Industrial and Motor Drive applications Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) 100% UIS Tested 100% Rg Tested -60V -28A < 40mΩ < 55mΩ TO252 DPAK D Top View Bottom View D D G S G G S Orderable Part Number AOD409G Package Type TO-252 Form Tape & Reel S Minimum Order Quantity 2500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum -60 ±20 -28 -18 -80 -9 -7 -26 34 60 24 6.2 4.0 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 15 40 Maximum Junction-to-Case Steady-State RθJC 1.7 Max 20 50 2.1 Units °C/W °C/W °C/W Rev.1.0: September 2017 www.aosmd.com Page 1 of 6 AOD409G Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -60 IDSS Zero Gate Voltage Drain Current VDS=-60V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250µA -1.5 VGS=-10V, ID=-20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-20A gFS Forward Transconductance VDS=-5V, ID=-20A VSD Diode Forward Voltage IS=-1A, VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Cr
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOD409G | P-Channel MOSFET | INCHANGE |
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AOD409 | P-Channel MOSFET | INCHANGE |
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AOD409 | P-Channel MOSFET | VBsemi |
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