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AOD4184A Datasheet 40V N-Channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

General Description

Product Summary The AOD4184A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is well suited for high current load applications.

VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 40V 50A < 7mW < 9.5mW TO252 DPAK D Top View Bottom View D D S G G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range VDS VGS ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG 40 ±20 50 40 120 13 10 35 61 50 25 2.3 1.5 -55 to 175 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 18 44 Maximum Junction-to-Case Steady-State RqJC 2.4 Max 22 55 3 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev1.0 : September 2023 www.aosmd.com Page 1 of 6 AOD4184A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 40 IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250mA 1.7 ID(ON) On state drain current VGS=10V, VDS=5V 120 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=15A gFS Forward Transconductance VDS=5V, ID=5A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current V 1 mA 5 ±100 nA 2.1 2.6 V A 5.8 7 mW 9.6 12 7.6 9.5 mW 37 S 0.7 1 V 20 A DYN

Overview

AOD4184A 40V N-Channel MOSFET General.