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AOD424G Datasheet N-Channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

General Description

• Trench Power MOSFET technology • Low RDS(ON) • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V) 20V 46A < 4.9mΩ < 6.3mΩ Applications • DC/DC Converters in Computing, Servers, and POL • Battery protection switch 100% UIS Tested 100% Rg Tested TO252 DPAK D Top View Bottom View D D G Orderable Part Number AOD424G S G S Package Type TO-252 Form Tape & Reel G S Minimum Order Quantity 2500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±12 46 46 184 30 24 40 80 50 20 6.2 4 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 15 40 Maximum Junction-to-Case Steady-State RqJC 2.0 Max 20 50 2.5 Units °C/W °C/W °C/W Rev.1.0: August 2017 www.aosmd.com Page 1 of 6 AOD424G Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250μA, VGS=0V VDS=20V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±12V VDS=VGS, ID=250mA VGS=4.5V, ID=20A Static Drain-Source On-Resistance Forward Transconductance VGS=2.5V, ID=18A VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current G TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capac

Overview

AOD424G 20V N-Channel MOSFET General.