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AOD603 - MOSFET

Description

The AOD603 uses advanced trench technology MOSFETs to provide excellent R DS(ON) and low gate charge.

The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

Standard Product AOD603 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • n-channel p-channel -60V VDS (V) = 60V ID = 12A (V GS=10V) -12A (VGS=-10V) RDS(ON) RDS(ON) < 60m Ω (VGS=10V) < 115m Ω (VGS =- 10V) < 150m Ω (VGS = -4.5V) < 85m Ω (VGS=4.5V) D2 D1 Top View Drain Connected to Tab G2 S2 G1 S1 n-channel S1 G1 D1/D2 G2 S2 p-channel Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Max n-channel Symbol VDS 60 Drain-Source Voltage VGS Gate-Source Voltage ±20 Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Max p-channel.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com AOD603 Complementary Enhancement Mode Field Effect Transistor General Description The AOD603 uses advanced trench technology MOSFETs to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOD603 is Pb-free (meets ROHS & Sony 259 specifications). AOD603L is a Green Product ordering option. AOD603 and AOD603L are electrically identical. TO-252 D-PAK Features n-channel p-channel -60V VDS (V) = 60V ID = 12A (V GS=10V) -12A (VGS=-10V) RDS(ON) RDS(ON) < 60m Ω (VGS=10V) < 115m Ω (VGS =- 10V) < 150m Ω (VGS = -4.5V) < 85m Ω (VGS=4.
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