Datasheet Details
| Part number | AON2403 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 242.31 KB |
| Description | 12V P-Channel MOSFET |
| Download | AON2403 Download (PDF) |
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Overview: AON2403 12V P-Channel MOSFET General.
| Part number | AON2403 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 242.31 KB |
| Description | 12V P-Channel MOSFET |
| Download | AON2403 Download (PDF) |
|
|
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The AON2403 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
Product Summary VDS ID (at VGS=-4.5V) RDS(ON) (at VGS =-4.5V) RDS(ON) (at VGS =-2.5V) RDS(ON) (at VGS =-1.8V) RDS(ON) (at VGS =-1.5V) -12V -8A < 21mΩ < 28mΩ < 40mΩ < 54mΩ DFN 2x2B Top View S Bottom View D D D S D Pin 1 G D Pin 1 G D S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Power Dissipation A C Maximum -12 ±8 -8 -6 -32 2.8 1.8 -55 to 150 Units V V A A W ° C VGS TA=25° C TA=70° C TA=25° C TA=70° C ID IDM PD TJ, TSTG Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Symbol t ≤ 10s Steady-State RθJA Typ 37 66 Max 45 80 Units ° C/W ° C/W Rev 0 : July 2012 www.aosmd.com Page 1 of 5 Free Datasheet http://www.datasheet4u.com/ AON2403 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-12V, VGS=0V C TJ=55° VDS=0V, VGS=±8V VDS=VGS, ID=-250µA VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-8A TJ=125° C RDS(ON) Static Drain-Source On-Resistance VGS=-2.5V, ID=-6A VGS=-1.8V, ID=-4A VGS=-1.5V, ID=-1A gFS VSD IS Forward Transconductance Diode Forward Voltage VDS=-5V, ID=-8A IS=-1A,VGS=0V -0.3 -32 16.5 19.3 21.5 30 36 33 -0.6 -1 -3.5 1370 VGS=0V, VDS=-6V, f=1MHz VGS=0V, VDS=0V, f=1MHz 350 258 10 12.7 VGS=-4.5V, VDS=-6V, ID=-8A 1.7 3.4 11 VGS=-4.5V, VDS=-6V, RL=0.75Ω, RGEN=3Ω IF=-8A, dI/dt=100A/µs 25 70 41.5 20.7 5.2 18 21 25 28 40 54 -0.6 Min -12 -1 -5 ±100 -0.9 Typ Max Units V µA nA V A mΩ mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakag
| Part Number | Description |
|---|---|
| AON2400 | 8V N-Channel MOSFET |
| AON2401 | 8V P-Channel MOSFET |
| AON2405 | 20V P-Channel MOSFET |
| AON2406 | 20V N-Channel MOSFET |
| AON2407 | 30V P-Channel MOSFET |
| AON2408 | 20V N-Channel MOSFET |
| AON2409 | 30V P-Channel MOSFET |
| AON2410 | 30V N-Channel MOSFET |
| AON2411 | 12V P-Channel MOSFET |
| AON2420 | 30V N-Channel AlphaMOS |