Datasheet Details
| Part number | AON2405 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 344.29 KB |
| Description | 20V P-Channel MOSFET |
| Download | AON2405 Download (PDF) |
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Overview: AON2405 20V P-Channel MOSFET General.
| Part number | AON2405 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 344.29 KB |
| Description | 20V P-Channel MOSFET |
| Download | AON2405 Download (PDF) |
|
|
|
Product Summary The AON2405 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
VDS ID (at VGS=-4.5V) RDS(ON) (at VGS =-4.5V) RDS(ON) (at VGS =-2.5V) RDS(ON) (at VGS =-1.8V) RDS(ON) (at VGS =-1.5V) -20V -8A < 32mW < 41mW < 56mW < 70mW DFN 2x2B Top View Bottom View D D6 S5 4 D(8) S(7) 2 3 G Pin 1 1 D D Pin 1 D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -20 ±8 -8 -6 -32 2.8 1.8 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 37 66 Max 45 80 Units V V A A W °C Units °C/W °C/W Rev.3.1: August 2023 www.aosmd.com Page 1 of 5 AON2405 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -20 V IDSS Zero Gate Voltage Drain Current VDS=-20V, VGS=0V TJ=55°C -1 -5 mA IGSS Gate-Body leakage current VDS=0V, VGS=±8V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250mA -0.3 -0.65 -0.9 V ID(ON) On state drain current VGS=-4.5V, VDS=-5V -32 A VGS=-4.5V, ID=-8A TJ=125°C 26 32 35 43 mW RDS(ON) Static Drain-Source On-Resistance VGS=-2.5V, ID=-5A 32 41 mW VGS=-1.8V, ID=-2A 41 56 mW VGS=-1.5V, ID=-2A 46 70 mW gFS Forward Transconductance VDS=-5V, ID=-8A 23 S VSD Diode Forward Voltage IS=-1A,VGS=0V -0.62 -1 V IS Maximum Body-Diode Continuous Current -4.5 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse
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