Datasheet Details
| Part number | AON2408 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 256.79 KB |
| Description | 20V N-Channel MOSFET |
| Download | AON2408 Download (PDF) |
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Overview: AON2408 20V N-Channel MOSFET General.
| Part number | AON2408 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 256.79 KB |
| Description | 20V N-Channel MOSFET |
| Download | AON2408 Download (PDF) |
|
|
|
The AON2408 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
Product Summary VDS ID (at VGS=4.5V) RDS(ON) (at VGS =4.5V) RDS(ON) (at VGS =2.5V) 20V 8A < 14.5mΩ < 19mΩ DFN 2x2B Top View S Bottom View D D D S D Pin 1 G D Pin 1 G D S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Power Dissipation A C Maximum 20 ±12 8 6 32 2.8 1.8 -55 to 150 Units V V A VGS TA=25° C TA=100° C TA=25° C TA=70° C ID IDM PD TJ, TSTG W ° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Symbol t ≤ 10s Steady-State RθJA Typ 37 66 Max 45 80 Units ° C/W ° C/W Rev 0 : Dec 2011 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AON2408 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=20V, VGS=0V C TJ=55° VDS=0V, VGS=±12V VDS=VGS, ID=250µA VGS=4.5V, VDS=5V VGS=4.5V, ID=8A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=2.5V, ID=4A Forward Transconductance Diode Forward Voltage VDS=5V, ID=8A IS=1A,VGS=0V TJ=125° C 0.5 32 11.6 16.3 15 50 0.65 1 3.5 782 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 158 98 2.4 7 VGS=4.5V, VDS=10V, ID=8A 1 2.4 3 VGS=4.5V, VDS=10V, RL=1.25Ω, RGEN=3Ω IF=8A, dI/dt=100A/µs 4.5 28 6 11 2.7 14.5 20.5 19 0.83 Min 20 1 5 ±100 1.2 Typ Max Units V µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Crss Rg Output
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|---|---|
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