Datasheet Details
| Part number | AON2809 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 251.34 KB |
| Description | 12V Dual P-Channel MOSFET |
| Download | AON2809 Download (PDF) |
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Overview: AON2809 12V Dual P-Channel MOSFET General.
| Part number | AON2809 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 251.34 KB |
| Description | 12V Dual P-Channel MOSFET |
| Download | AON2809 Download (PDF) |
|
|
|
The AON2809 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
Product Summary VDS ID (at VGS=-4.5V) RDS(ON) (at VGS=-4.5V) RDS(ON) (at VGS=-2.5V) RDS(ON) (at VGS=-1.8V) Typical ESD protection -12V -2A < 68mΩ < 90mΩ < 118mΩ HBM Class 2 DFN 2x2A Top View Bottom View D1 G2 S2 D1 D2 D2 Pin 1 G1 S1 Pin 1 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C TA=25°C Power Dissipation B TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D TA=25°C TA=70°C VGS ID IDM PD TJ, TSTG Maximum -12 ±8 -2 -1.6 -8 2.1 1.3 -55 to 150 Units V V A W °C Symbol t ≤ 10s Steady-State RθJA Typ 50 80 Max 60 100 Units °C/W °C/W Rev 0: Nov.
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