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AON3810 - 20V Dual N-Channel MOSFET

Description

The AON3810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.

It is ESD protected.

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Full PDF Text Transcription

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AON3810 20V Dual N-Channel MOSFET General Description The AON3810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its commondrain configuration. Product Summary VDS (V) = 20V ID = 8.5A (VGS = 10V) RDS(ON) < 24mΩ (VGS = 10V) RDS(ON) < 28mΩ (VGS = 4.5V) RDS(ON) < 39mΩ (VGS = 2.5V) RDS(ON) < 55mΩ (VGS = 1.8V) ESD Rating: 2000V HBM Top View DFN 3x3 Bottom View Top View S2 1 8 G2 2 7 S1 3 6 G1 4 5 D2 D2 G1 D1 D1 1.
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