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AON4407 - 12V P-Channel MOSFET

Description

The AON4407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch.

Features

  • VDS (V) = -12V ID = -9 A (VGS = -4.5V) RDS(ON) < 20mΩ (VGS = -4.5V) RDS(ON) < 25mΩ (VGS = -2.5V) RDS(ON) < 31mΩ (VGS = -1.8V) ESD Protected Top View DFN 3x2 Bottom View Pin 1 DD Rg DD D DG GS Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C ID IDM Power Dissipation B TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, T.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AON4407 12V P-Channel MOSFET General Description The AON4407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. Features VDS (V) = -12V ID = -9 A (VGS = -4.5V) RDS(ON) < 20mΩ (VGS = -4.5V) RDS(ON) < 25mΩ (VGS = -2.5V) RDS(ON) < 31mΩ (VGS = -1.8V) ESD Protected Top View DFN 3x2 Bottom View Pin 1 DD Rg DD D DG GS Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C ID IDM Power Dissipation B TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -12 ±8 -9 -7 -60 2.5 1.
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