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AON4421 - P-Channel Enhancement Mode Field Effect Transistor

Description

The AON4421 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.

This device is suitable for use as a load switch.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AON4421 P-Channel Enhancement Mode Field Effect Transistor General Description The AON4421 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch. Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) -30V -8A < 26mW < 34mW -RoHS Compliant -Halogen Free ESD Protected Top View DFN 3x2 Bottom View Pin 1 D 1 8 D D 2 7D D 3 6D G G 4 5 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±20 -8 -6 -60 3.
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