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AON5802B - 30V Common-Drain Dual N-Channel MOSFET

Datasheet Summary

Description

The AON5802B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.

It is ESD protected.

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Datasheet Details

Part number AON5802B
Manufacturer Alpha & Omega Semiconductors
File Size 269.12 KB
Description 30V Common-Drain Dual N-Channel MOSFET
Datasheet download datasheet AON5802B Datasheet
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AON5802B 30V Common-Drain Dual N-Channel MOSFET General Description Product Summary The AON5802B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. VDS ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=4.0V) RDS(ON) (at VGS=3.1V) RDS(ON) (at VGS=2.5V) Typical ESD protection 30V 7.
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