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Alpha & Omega Semiconductors

AON5802B Datasheet Preview

AON5802B Datasheet

30V Common-Drain Dual N-Channel MOSFET

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AON5802B
30V Common-Drain Dual N-Channel MOSFET
General Description
Product Summary
The AON5802B uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V while retaining a 12V
VGS(MAX) rating. It is ESD protected. This device is suitable
for use as a uni-directional or bi-directional load switch,
facilitated by its common-drain configuration.
VDS
ID (at VGS=4.5V)
RDS(ON) (at VGS=4.5V)
RDS(ON) (at VGS=4.0V)
RDS(ON) (at VGS=3.1V)
RDS(ON) (at VGS=2.5V)
Typical ESD protection
30V
7.2A
< 19m
< 20m
< 23m
< 30m
HBM Class 3A
S1
S1
G1
Top View
DFN 2X5
Bottom View
S2
S2
G2
D1/D2
Rg
G1
D1
Rg
G2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current
TC=70°C
Pulsed Drain Current B
ID
IDM
Power Dissipation A TA=25°C
TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±12
7.2
5.6
55
1.6
1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient AC
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
30
61
4.5
Max
40
75
6
D2
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev.6. 0: July 2013
www.aosmd.com
Page 1 of 5




Alpha & Omega Semiconductors

AON5802B Datasheet Preview

AON5802B Datasheet

30V Common-Drain Dual N-Channel MOSFET

No Preview Available !

AON5802B
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
IDSS Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
TJ=55°C
1
µA
5
IGSS Gate-Body leakage current
VDS=0V, VGS=±10V
±10 µA
BVGSO Gate-Source Breakdown Voltage
VDS=0V, IG=±250uA
±12
V
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250µA
0.6 1.1 1.5
V
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
55
A
VGS=4.5V, ID=7A
12
TJ=125°C 19
15.5
23.5
19
29
m
RDS(ON) Static Drain-Source On-Resistance VGS=4.0V, ID=5A
13 16 20 m
VGS=3.1V, ID=5A
14 18 23 m
VGS=2.5V, ID=4A
17 23 30 m
gFS Forward Transconductance
VDS=5V, ID=7A
32 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
0.71 0.9
V
IS Maximum Body-Diode Continuous Current
2.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
920 1150 pF
105 pF
52 pF
1.7 2.5 K
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
17.5 24 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=7A
7.5 10 nC
2.9 nC
Qgd Gate Drain Charge
2.5 nC
tD(on)
Turn-On DelayTime
0.32 0.42 µs
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=2.1,
RGEN=3
0.55
4.35
µs
µs
tf Turn-Off Fall Time
2.4 µs
trr Body Diode Reverse Recovery Time IF=7A, dI/dt=100A/µs
21.6 26
ns
Qrr Body Diode Reverse Recovery Charge IF=7A, dI/dt=100A/µs
10 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the steady state thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.6. 0: July 2013
www.aosmd.com
Page 2 of 5


Part Number AON5802B
Description 30V Common-Drain Dual N-Channel MOSFET
Maker Alpha & Omega Semiconductors
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AON5802B Datasheet PDF






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