Datasheet Summary
20V mon-Drain Dual N-Channel MOSFET
General Description
Product Summary
The AON5820 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its mon-drain configuration.
VDS ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=4.0V) RDS(ON) (at VGS=3.5V) RDS(ON) (at VGS=3.1V) RDS(ON) (at VGS=2.5V)
Typical ESD protection
20V 10A < 9.5mW < 10mW < 10.5mW < 11.5mW < 13mW
HBM Class 2
S1 S1 G1
Top View
DFN 2X5 Bottom View
S2 S2 G2
D1/D2
D1
G1
G2...