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AON5820 Datasheet 20v Common-drain Dual N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AON5820 20V mon-Drain Dual N-Channel MOSFET General.

General Description

Product Summary The AON5820 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating It is ESD protected.

This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its mon-drain configuration.

VDS ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=4.0V) RDS(ON) (at VGS=3.5V) RDS(ON) (at VGS=3.1V) RDS(ON) (at VGS=2.5V) Typical ESD protection 20V 10A < 9.5mW < 10mW < 10.5mW < 11.5mW < 13mW HBM Class 2 S1 S1 G1 Top View DFN 2X5 Bottom View S2 S2 G2 D1/D2 D1 G1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±12 10 8 85 1.7 1 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 30 61 Maximum Junction-to-Case Steady-State RqJC 4.5 Max 40 75 5.5 D2 S2 Units V V A W °C Units °C/W °C/W °C/W Rev 1.0: September 2023 .aosmd.

More Datasheets from Alpha & Omega Semiconductors

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AON5802 Field Effect Transistor
AON5802B 30V Common-Drain Dual N-Channel MOSFET
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AON5810 Dual N-Channel MOSFET
AON1605 20V P-Channel MOSFET
AON1606 20V N-Channel MOSFET
AON1610 20V N-Channel MOSFET
AON1611 P-Channel MOSFET
AON1620 12V N-Channel MOSFET

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