Datasheet Summary
30V mon-Drain Dual N-Channel MOSFET
General Description
Product Summary
The AON5802B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its mon-drain configuration.
VDS ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=4.0V) RDS(ON) (at VGS=3.1V) RDS(ON) (at VGS=2.5V)
Typical ESD protection
30V 7.2A < 19mΩ < 20mΩ < 23mΩ < 30mΩ
HBM Class 3A
S1 S1 G1
Top View
DFN 2X5 Bottom View
S2 S2 G2
D1/D2
Rg
G1
D1
Rg
G2
S1
Absolute Maximum...