AON5810 Datasheet | Alpha & Omega Semiconductors

Description The AON5810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its mon-drain configuration. Standard Product AON5810 is Pb-free (meets ROHS & Sony 259 specifications). AON5810L is a Green Product ordering option. AON5810 and AON5810L are electrically identical. Features VDS (V) = 20V ID = 7.7 A (VGS = 4.5V) RDS(ON) < 18 mΩ (VGS = 4.5V) RDS(ON) < 19 mΩ (VGS = 4.0V) RDS(ON) < 21 mΩ (VGS = 3.1V) RDS(ON) < 25 mΩ (VGS = 2.5V) RDS(ON) < 40 mΩ (VGS = 1.8V) ESD Rating: 2000V HBM DFN 2X5 S2 S1 G1 S1 G2 D1 S2 D2 D1/D2 G1 S1 S2 S2 G1 S1 S1 S2 G2 Top View G2 Bottom View Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current RθJA=75° C/W Pulsed Drain Current B TA=25° C Power Dissipation A RθJA=75° C/W TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B TA=25° C TA=70° C VGS ID IDM PDSM TJ, TSTG Maximum 20 ±12 7.7 6.1 30 1.6 1.0 -55 to 150 Units V W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 30 61 4.5 Max 40 75 6 Units ° C/W ° C/W ° C/W Alpha & Omega Semiconductor, Ltd. Free Datasheet http://../ Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=16V, VGS=0V TJ=55° C VDS=0V, VGS=±10V VDS=0V, IG=±250u A VDS=VGS, ID=250µA VGS=4.5V, VDS=5V VGS=4.5V, ID=7.7A TJ=125° C RDS(ON) Static Drain-Source On-Resistance VGS=4.0V, ID=6A VGS=3.1V, ID=6A VGS=2.5V, ID=5A VGS=1.8V, ID=4A g FS VSD IS Forward Transconductance Diode Forward Voltage VDS=5V, ID=7.7A IS=1A,VGS=0V 0.5 ±12 0.5 30 11 16 11 13 15 25 14 21 14.5 16.7 20 32 28 0.74 1 2.5 1360 VGS=0V,...