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AON5810 Datasheet Preview

AON5810 Datasheet

Dual N-Channel MOSFET

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AON5810
Common-Drain Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AON5810 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. It is ESD protected. This
device is suitable for use as a uni-directional or bi-
directional load switch, facilitated by its common-drain
configuration. Standard Product AON5810 is Pb-free
(meets ROHS & Sony 259 specifications). AON5810L
is a Green Product ordering option. AON5810 and
AON5810L are electrically identical.
Features
VDS (V) = 20V
ID = 7.7 A (VGS = 4.5V)
RDS(ON) < 18 m(VGS = 4.5V)
RDS(ON) < 19 m(VGS = 4.0V)
RDS(ON) < 21 m(VGS = 3.1V)
RDS(ON) < 25 m(VGS = 2.5V)
RDS(ON) < 40 m(VGS = 1.8V)
ESD Rating: 2000V HBM
DFN 2X5
S1
S1
G1
S2
S2
G2
D1/D2
Top View
S2
S2
G2
S1
S1
G1
Bottom View
D1
G1
S1
G2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current RθJA=75°C/W TA=70°C
Pulsed Drain Current B
Power Dissipation A TA=25°C
RθJA=75°C/W
TA=70°C
Junction and Storage Temperature Range
ID
IDM
PDSM
TJ, TSTG
Maximum
20
±12
7.7
6.1
30
1.6
1.0
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
30
61
4.5
Max
40
75
6
D2
S2
Units
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
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Alpha & Omega Semiconductors

AON5810 Datasheet Preview

AON5810 Datasheet

Dual N-Channel MOSFET

No Preview Available !

AON5810
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
BVGSO
VGS(th)
ID(ON)
Gate-Body leakage current
Gate-Source Breakdown Voltage
Gate Threshold Voltage
On state drain current
ID=250µA, VGS=0V
VDS=16V, VGS=0V
VDS=0V, VGS=±10V
VDS=0V, IG=±250uA
VDS=VGS, ID=250µA
VGS=4.5V, VDS=5V
VGS=4.5V, ID=7.7A
TJ=55°C
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=4.0V, ID=6A
VGS=3.1V, ID=6A
VGS=2.5V, ID=5A
VGS=1.8V, ID=4A
Forward Transconductance
VDS=5V, ID=7.7A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VGS=4.5V, VDS=10V, ID=7.7A
VGS=5V, VDS=10V, RL=1.4,
RGEN=3
IF=7.7A, dI/dt=100A/µs
IF=7.7A, dI/dt=100A/µs
Min
20
±12
0.5
30
11
16
11
13
15
25
0.5
Typ
0.73
14
21
14.5
16.7
20
32
28
0.74
1360
200
178
1.5
13.1
2
3.9
6.2
11
40.5
10
18.8
8.1
Max Units
V
1
µA
5
10 µA
V
1V
A
18
m
26
19 m
21 m
25 m
40 m
S
1V
2.5 A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev 1: Sep. 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.


Part Number AON5810
Description Dual N-Channel MOSFET
Maker Alpha & Omega Semiconductors
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