AON5810 - Dual N-Channel MOSFET

Alpha & Omega Semiconductors

AON5810 Datasheet Preview — Preview of AON5810 PDF

Datasheet Details

Part number	AON5810
Manufacturer	Alpha & Omega Semiconductors
File Size	427.96 KB
Description	Dual N-Channel MOSFET
Datasheet	AON5810_AlphaOmegaSemiconductors.pdf

AON5810 Product details

Description

The AON5810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.

Features

VDS (V) = 20V ID = 7.7 A (VGS = 4.5V) RDS(ON) < 18 mΩ (VGS = 4.5V) RDS(ON) < 19 mΩ (VGS = 4.0V) RDS(ON) < 21 mΩ (VGS = 3.1V) RDS(ON) < 25 mΩ (VGS = 2.5V) RDS(ON) < 40 mΩ (VGS = 1.8V) ESD Rating: 2000V HBM DFN 2X5 S2 S1 G1 S1 G2 D1 S2 D2 D1/D2 G1 S1 S2 S2 G1 S1 S1 S2 G2 Top View G2 Bottom View Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current RθJA=75° C/W Pulsed Drain Current B TA=25° C Power Dis.

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Other Datasheets by Alpha & Omega Semiconductors

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Published: Aug 14, 2013 |