Datasheet Details
| Part number | AON5820 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 366.76 KB |
| Description | 20V Common-Drain Dual N-Channel MOSFET |
| Datasheet |
 AON5820 Datasheet
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| Part number | AON5820 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 366.76 KB |
| Description | 20V Common-Drain Dual N-Channel MOSFET |
| Datasheet |
AON5820 Datasheet
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Product Summary The AON5820 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating It is ESD protected.
This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration.
VDS ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=4.0V) RDS(ON) (at VGS=3.5V) RDS(ON) (at VGS=3.1V) RDS(ON) (at VGS=2.5V) Typical ESD protection 20V 10A < 9.5mW < 10mW < 10.5mW < 11.5mW < 13mW HBM Class 2 S1 S1 G1 Top View DFN 2X5 Bottom View S2 S2 G2 D1/D2 D1 G1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±12 10 8 85 1.7 1 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 30 61 Maximum Junction-to-Case Steady-State RqJC 4.5 Max 40 75 5.5 D2 S2 Units V V A W °C Units °C/W °C/W °C/W Rev 1.0: September 2023 www.aosmd.com Page 1 of 6 AON5820 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 20 V IDSS Zero Gate Voltage Drain Current VDS=20V, VGS=0V TJ=55°C 1 5 mA IGSS Gate-Body leakage current VDS=0V, VGS=±10V 10 mA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 0.3 0.65 1.0 V ID(ON) On state drain current VGS=4.5V, VDS=5V 85 A VGS=4.5V, ID=10A 5.5 7.4 9.5 mW TJ=125°C 8 11 14 RDS(ON) Static Drain-Source On-Resistance VGS=4.0V, ID=10A VGS=3.5V, ID=9A 5.8 7.6 10 mW 6 8 10.5 mW VGS=3.1V, ID=9A 6.3 8.3
AON5820 20V Common-Drain Dual N-Channel MOSFET General.
| Part Number | Description |
|---|---|
| AON5800 | Field Effect Transistor |
| AON5802 | Field Effect Transistor |
| AON5802B | 30V Common-Drain Dual N-Channel MOSFET |
| AON5802BG | 30V Dual N-Channel MOSFET |
| AON5810 | Dual N-Channel MOSFET |
| AON1605 | 20V P-Channel MOSFET |
| AON1606 | 20V N-Channel MOSFET |
| AON1610 | 20V N-Channel MOSFET |
| AON1611 | P-Channel MOSFET |
| AON1620 | 12V N-Channel MOSFET |