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Alpha & Omega Semiconductors

AON5820 Datasheet Preview

AON5820 Datasheet

20V Common-Drain Dual N-Channel MOSFET

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AON5820
20V Common-Drain Dual N-Channel MOSFET
General Description
Product Summary
The AON5820 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V while retaining a 12V
VGS(MAX) rating It is ESD protected. This device is suitable
for use as a uni-directional or bi-directional load switch,
facilitated by its common-drain configuration.
VDS
ID (at VGS=4.5V)
RDS(ON) (at VGS=4.5V)
RDS(ON) (at VGS=4.0V)
RDS(ON) (at VGS=3.5V)
RDS(ON) (at VGS=3.1V)
RDS(ON) (at VGS=2.5V)
Typical ESD protection
20V
10A
< 9.5m
< 10m
< 10.5m
< 11.5m
< 13m
HBM Class 2
S1
S1
G1
Top View
DFN 2X5
Bottom View
S2
S2
G2
D1/D2
D1
G1 G2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
20
±12
10
8
85
1.7
1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
30
61
4.5
Max
40
75
5.5
D2
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: Oct. 2011
www.aosmd.com
Page 1 of 6
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Alpha & Omega Semiconductors

AON5820 Datasheet Preview

AON5820 Datasheet

20V Common-Drain Dual N-Channel MOSFET

No Preview Available !

AON5820
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
ID=250µA, VGS=0V
VDS=20V, VGS=0V
VDS=0V, VGS=±10V
VDS=VGS, ID=250µA
VGS=4.5V, VDS=5V
VGS=4.5V, ID=10A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=4.0V, ID=10A
VGS=3.5V, ID=9A
VGS=3.1V, ID=9A
VGS=2.5V, ID=8A
Forward Transconductance
VDS=5V, ID=10A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
20
0.3
85
5.5
8
5.8
6
6.3
6.8
1
5
10
0.65 1.0
7.4 9.5
11 14
7.6 10
8 10.5
8.3 11.5
9.2 13
65
0.58 1
2.5
V
µA
µA
V
A
m
m
m
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1000
150
100
1255
220
168
2.5
1510
290
235
pF
pF
pF
K
SWITCHING PARAMETERS
Qg Total Gate Charge
10 12.5 15 nC
Qgs Gate Source Charge
VGS=4.5V, VDS=10V, ID=10A
5.5 nC
Qgd Gate Drain Charge
6.5 nC
tD(on)
Turn-On DelayTime
1.1 µs
tr Turn-On Rise Time
VGS=4.5V, VDS=10V, RL=1,
2.6 µs
tD(off)
Turn-Off DelayTime
RGEN=3
7 µs
tf Turn-Off Fall Time
7.4 µs
trr Body Diode Reverse Recovery Time IF=10A, dI/dt=500A/µs
8.5 11 13.5 ns
Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs
12 15 18 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Oct. 2011
www.aosmd.com
Page 2 of 6


Part Number AON5820
Description 20V Common-Drain Dual N-Channel MOSFET
Maker Alpha & Omega Semiconductors
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