Datasheet Details
| Part number | AON6411 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 426.01 KB |
| Description | 20V P-Channel MOSFET |
| Download | AON6411 Download (PDF) |
|
|
| Part number | AON6411 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 426.01 KB |
| Description | 20V P-Channel MOSFET |
| Download | AON6411 Download (PDF) |
|
|
|
The AON6411 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
Product Summary VDS ID (at VGS= -10V) RDS(ON) (at VGS= -10V) RDS(ON) (at VGS =-4.5V) RDS(ON) (at VGS =-2.5V) 100% UIS Tested 100% Rg Tested -20 -85A < 2.1mW < 2.5mW < 3.6mW Top View DFN5X6 Bottom View PIN1 D Top View S1 S2 S3 G4 8D 7D 6D 5D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS Power Dissipation B TC=25°C TC=100°C PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum -20 ±12 -85 -67 -340 -47 -38 70 245 156 62.5 7.3 4.7 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 14 40 Maximum Junction-to-Case Steady-State RqJC 0.6 Max 17 55 0.8 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 1.1: September 2023 www.aosmd.com Page 1 of 6 AON6411 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -20 V IDSS Zero Gate Voltage Drain Current VDS=-20V, VGS=0V TJ=55°C -1 -5 mA IGSS Gate-Body leakage current VDS=0V, VGS=±12V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250mA -0.5 -0.85 -1.3 V ID(ON) On state drain current VGS=-10V, VDS=-5V -340 A RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-20A VGS=-4.5V, ID=-20A TJ=125°C 1.7 2.1 2.45 3 mW 2 2.5 mW VGS=-2.5V, ID=-20A 2.8 3.6 mW gFS Forward Transconductance
AON6411 20V P-Channel MOSFET General.
| Part Number | Description |
|---|---|
| AON6410 | N-Channel MOSFET |
| AON6413 | 30V P-Channel MOSFET |
| AON6414 | N-Channel MOSFET |
| AON6414A | 30V N-Channel MOSFET |
| AON6416 | N-Channel MOSFET |
| AON6418 | N-Channel MOSFET |
| AON6400 | N-Channel MOSFET |
| AON6403 | 30V P-Channel MOSFET |
| AON6403L | N-Channel MOSFET |
| AON6404 | N-Channel MOSFET |