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AON6416 - N-Channel MOSFET

General Description

The AON6416 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior.

This universal technology is well suited for PWM, load switching and general purpose applications.

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AON6416 30V N-Channel MOSFET SDMOS TM General Description The AON6416 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 22A < 8mΩ < 14mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom View 1 2 3 4 D Top View 8 7 6 5 G S PIN1 Absolute Maximum Ratings TA=25° C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.