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AON6410
30V N-Channel MOSFET
General Description
The AON6410 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications.
Product Summary
VDS (V) = 30V ID = 24A (VGS = 10V) RDS(ON) < 12mΩ (VGS = 10V) RDS(ON) < 14mΩ (VGS = 4.5V)
100% UIS Tested 100% Rg Tested
Top View
DFN5X6 Bottom View
PIN1
Top View
18 27 36 45
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current BJ
TC=25°C TC=100°C
ID
Pulsed Drain Current
IDM
Continuous Drain TA=25°C
Current H
TA=70°C
Avalanche Current C
Repetitive avalanche energy L=0.
AON6410 Datasheet
