Datasheet Details
| Part number | AON6482 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 266.50 KB |
| Description | N-Channel MOSFET |
| Download | AON6482 Download (PDF) |
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| Part number | AON6482 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 266.50 KB |
| Description | N-Channel MOSFET |
| Download | AON6482 Download (PDF) |
|
|
|
The AON6482 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100V 28A < 37mΩ < 42mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom View 1 2 3 4 Top View 8 7 6 5 D G S PIN1 Absolute Maximum Ratings TA=25° C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case C Maximum 100 ±20 28 18 70 5.5 4.4 35 61 63 25 2.5 1.6 -55 to 150 Units V V A VGS TC=25° C C TC=100° TA=25° C TA=70° C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 14.2 42 1.2 Max 20 50 2 Units ° C/W ° C/W ° C/W Rev2 : March 2011 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AON6482 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=100V, VGS=0V TJ=55° C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=10A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=10A Forward Transconductance Diode Forward Voltage VDS=5V, ID=10A IS=1A,VGS=0V G Min 100 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current 1 5 100 1.6 70 29 TJ=125° C 59 32 45 0.7 1 60 1300 1630
AON6482 100V N-Channel MOSFET General.
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|---|---|
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