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AON6998 - 30V Dual Asymmetric N-Channel MOSFET

Description

Trench Power αMOS Technology Low RDS(ON) Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 30V 50A < 5.2mΩ < 8.6mΩ Q2 30V 82A < 2.6mΩ < 2.99mΩ

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AON6998 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power αMOS Technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 30V 50A < 5.2mΩ < 8.6mΩ Q2 30V 82A < 2.6mΩ < 2.
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