Datasheet Details
| Part number | AON7436 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 445.48 KB |
| Description | 20V N-Channel MOSFET |
| Datasheet | AON7436_AlphaOmegaSemiconductors.pdf |
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Overview: www.DataSheet.co.kr AON7436 20V N-Channel MOSFET General.
| Part number | AON7436 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 445.48 KB |
| Description | 20V N-Channel MOSFET |
| Datasheet | AON7436_AlphaOmegaSemiconductors.pdf |
|
|
|
The AON7436 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) RDS(ON) (at VGS =2.5V) RDS(ON) (at VGS =1.8V) 20V 23A < 19mΩ < 22mΩ < 32mΩ < 50mΩ 100% Rg Tested DFN 3x3A Top View Bottom View 1 2 3 4 Top View 8 7 6 5 D G Pin 1 S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Drain Current Power Dissipation B Power Dissipation A C Maximum 20 ±12 23 15 50 9 7 16.7 7 3.1 2 -55 to 150 Units V V A VGS TC=25° C TC=100° C TA=25° C TA=70° C TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM PD PDSM TJ, TSTG A W W ° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 30 60 6.2 Max 40 75 7.5 Units ° C/W ° C/W ° C/W Rev 0: August 2010 www.aosmd.com Page 1 of 6 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr AON7436 C unless otherwise noted) Electrical Characteristics (TJ=25° Symbol Parameter Conditions ID=250µA, VGS=0V VDS=20V, VGS=0V C TJ=55° VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=9A TJ=125° C RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=7A VGS=2.5V, ID=6A VGS=1.8V, ID=2A gFS VSD IS Forward Transconductance Diode Forward Voltage VDS=5V, ID=9A IS=1A,VGS=0V 0.4 50 15.5 22 17.5 23 32 20 0.7 1 15 420 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 65 45 0.8 525 95 75 1.7 12.5 VGS=10V, VDS=10V, ID=9A 6 1 2 3 VGS=10V, VDS=10V, RL=1.1Ω, RGEN=3Ω IF=9A, dI/dt=100A/µs 7.5 20 6 14 6 17 630 125 105 2.6 15 19 27 22 32 50 0.75 Min 20 1 5 100 1.1 Typ Max Unit
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