Datasheet Details
| Part number | AON7788 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 273.44 KB |
| Description | 30V N-Channel MOSFET |
| Download | AON7788 Download (PDF) |
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Overview: AON7788 30V N-Channel MOSFET SRFET TM General.
| Part number | AON7788 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 273.44 KB |
| Description | 30V N-Channel MOSFET |
| Download | AON7788 Download (PDF) |
|
|
|
Product Summary SRFETTM AON7788 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 40A < 4.5mΩ < 5.3mΩ 100% UIS Tested 100% Rg Tested DFN 3x3_EP Top View Bottom View Pin 1 Top View 18 27 36 4 5G D SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 40 31 150 20 16 35 61 36 14 3.1 2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 30 60 2.8 Max 40 75 3.4 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 0 : Jan 2011 www.aosmd.com Page 1 of 7 AON7788 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=10mA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=125°C 0.5 mA 100 IGSS Gate-Body leakage current VDS=0V, VGS= ±12V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 1.6 2 V ID(ON) On state drain current VGS=10V, VDS=5V 150 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C 3.7 5.5 4.5 6.6 mΩ VGS=4.5V, ID=20A 4.2 5.3 mΩ gFS Forward Tr
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