Datasheet Details
| Part number | AONP36320 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 935.01 KB |
| Description | 30V Dual Asymmetric N-Channel MOSFET |
| Datasheet | AONP36320-AlphaOmegaSemiconductors.pdf |
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Overview: General.
| Part number | AONP36320 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 935.01 KB |
| Description | 30V Dual Asymmetric N-Channel MOSFET |
| Datasheet | AONP36320-AlphaOmegaSemiconductors.pdf |
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• Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Applications • Motor Drive • Buck-Boost Converters • See Note I DFN3.3x3.3C AONP36320 30V Dual Asymmetric N-Channel MOSFET Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 Q2 30V 30V 100A 103A < 3.2mΩ < 3mΩ < 5.2mΩ < 5mΩ 100% UIS Tested 100% Rg Tested Top View Bottom View Pin 1 Pin 1 Orderable Part Number AONP36320 Package Type DFN3.3x3.3C Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 Max Q2 Drain-Source Voltage VDS 30 30 Gate-Source Voltage VGS ±20 ±20 Continuous Drain Current TC=25°C TC=100°C 100 103 ID 63 65 Pulsed Drain Current C IDM 185 190 Continuous Drain Current TA=25°C TA=70°C 26 27 IDSM 20 21 Avalanche Current C IAS 39 36 Avalanche energy L=0.1mH C EAS 76 65 TC=25°C Power Dissipation B TC=100°C 50 PD 20 50 20 TA=25°C Power Dissipation A TA=70°C 3.3 3.3 PDSM 2.1 2.1 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ Q1 Typ Q2 Max Q1 Max Q2 30 30 37 37 55 55 70 70 2 2 2.5 2.5 Units °C/W °C/W °C/W Rev.2.1: May 2021 www.aosmd.com Page 1 of 10 AONP36320 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.3 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductanc
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