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AONP36332U - 30V Dual Asymmetric N-Channel MOSFET

General Description

Bottom source technology Very Low RDS(ON) at Vgs 4.5V Low Gate Charge High Current Capability RoHS 2.0 and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 Q2 30V 30V 97A 60A < 3.5mΩ < 4.4

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AONP36332U 30V Dual Asymmetric N-Channel MOSFET General Description • Bottom source technology • Very Low RDS(ON) at Vgs 4.5V • Low Gate Charge • High Current Capability • RoHS 2.0 and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 Q2 30V 30V 97A 60A < 3.5mΩ < 4.4mΩ < 4.5mΩ < 5.6mΩ Applications • Buck-boost Converters in Computing • Point of Load Converter • See Note H DFN3.3x3.3D 100% UIS Tested 100% Rg Tested Top View Bottom View Q2 Q1 Pin 1 Pin 1 Orderable Part Number AONP36332U Package Type Form DFN3.3x3.